AM2306 mosfet equivalent, -30v n-channel enhancement mode mosfet.
* -30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V
* 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V
* Super high density cell design for extremely
low RDS(ON)
* Exception.
devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully a.
The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resis.
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